US 12,253,796 B2
Extreme ultraviolet mask and method for forming the same
Yun-Yue Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 19, 2023, as Appl. No. 18/545,948.
Application 18/545,948 is a continuation of application No. 17/744,567, filed on May 13, 2022, granted, now 11,846,880.
Application 17/744,567 is a continuation of application No. 16/889,604, filed on Jun. 1, 2020, granted, now 11,360,376, issued on Jun. 14, 2022.
Claims priority of provisional application 62/893,753, filed on Aug. 29, 2019.
Prior Publication US 2024/0192582 A1, Jun. 13, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/24 (2012.01)
CPC G03F 1/24 (2013.01) 20 Claims
 
1. A photolithography mask, comprising:
a substrate;
a reflective multilayer structure over the substrate;
an adhesion layer in direct contact with a topmost surface of the reflective multilayer structure, wherein the adhesion layer comprises a dielectric material;
an amorphous capping layer over the adhesion layer, the amorphous capping layer comprising a transitional metal having a first carbon solubility and a dopant having second carbon solubility less than the first carbon solubility; and
a patterned absorber layer over the amorphous capping layer.