US 12,253,780 B2
Electronic device comprising substrate assembly including two types of transistors
Chandra Lius, Miao-Li County (TW); Kuan-Feng Lee, Miao-Li County (TW); and Nai-Fang Hsu, Miao-Li County (TW)
Assigned to INNOLUX CORPORATION, Miao-Li County (TW)
Filed by InnoLux Corporation, Miao-Li County (TW)
Filed on Jun. 29, 2023, as Appl. No. 18/216,182.
Application 18/216,182 is a continuation of application No. 17/230,319, filed on Apr. 14, 2021, granted, now 11,726,377.
Application 17/230,319 is a continuation of application No. 16/910,707, filed on Jun. 24, 2020, granted, now 11,003,039, issued on May 11, 2021.
Application 16/910,707 is a continuation of application No. 16/218,562, filed on Dec. 13, 2018, granted, now 10,732,475, issued on Aug. 4, 2020.
Application 16/218,562 is a continuation of application No. 15/484,161, filed on Apr. 11, 2017, granted, now 10,191,345, issued on Jan. 29, 2019.
Claims priority of provisional application 62/415,542, filed on Nov. 1, 2016.
Prior Publication US 2023/0359097 A1, Nov. 9, 2023
Int. Cl. H01L 27/12 (2006.01); G02F 1/13 (2006.01); G02F 1/1345 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 29/786 (2006.01)
CPC G02F 1/1368 (2013.01) [G02F 1/13454 (2013.01); G02F 1/136209 (2013.01); G02F 1/13624 (2013.01); H01L 27/1225 (2013.01); H01L 27/1237 (2013.01); H01L 27/1251 (2013.01); G02F 1/13685 (2021.01); G02F 2202/104 (2013.01); H01L 29/78675 (2013.01); H01L 29/7869 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A substrate assembly, comprising:
a substrate;
a first transistor disposed on the substrate, wherein the first transistor comprises a first semiconductor layer and a first drain electrode electrically connected to the first semiconductor layer, and the first semiconductor layer is a silicon semiconductor layer;
a second transistor disposed on the substrate, wherein the second transistor comprises a second semiconductor layer, a second source electrode and a second drain electrode electrically connected to the second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer;
a first insulating layer disposed under the first semiconductor layer;
a second insulating layer disposed on the first semiconductor layer;
a first buffer layer disposed between the substrate and the first insulating layer;
a second buffer layer disposed between the substrate and the first buffer layer;
wherein a ratio of a thickness of the first insulating layer to a thickness of the second insulating layer is greater than or equal to 1.25 and less than or equal to 4;
wherein the first insulating layer comprises silicon oxide, the first buffer layer comprises silicon nitride, and the second buffer layer comprises silicon oxide;
wherein the first drain electrode is electrically connected to the second source electrode.