US 12,253,729 B2
Optical transceiver and manufacturing method thereof
Chen-Hua Yu, Hsinchu (TW); Hsing-Kuo Hsia, Jhubei (TW); Sung-Hui Huang, Dongshan Township (TW); Kuan-Yu Huang, Taipei (TW); Kuo-Chiang Ting, Hsinchu (TW); Shang-Yun Hou, Jubei (TW); and Chi-Hsi Wu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 26, 2022, as Appl. No. 17/952,681.
Application 17/952,681 is a continuation of application No. 17/121,060, filed on Dec. 14, 2020, granted, now 11,454,773.
Application 17/121,060 is a continuation of application No. 16/451,472, filed on Jun. 25, 2019, granted, now 10,866,373, issued on Dec. 15, 2020.
Claims priority of provisional application 62/864,608, filed on Jun. 21, 2019.
Claims priority of provisional application 62/690,658, filed on Jun. 27, 2018.
Prior Publication US 2023/0014813 A1, Jan. 19, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G02B 6/42 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01)
CPC G02B 6/4255 (2013.01) [G02B 6/4243 (2013.01); G02B 6/4246 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 23/481 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/81815 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a photonic integrated circuit die comprising a groove;
a die electrically connected to the photonic integrated circuit die;
a dam located over the photonic integrated circuit die and adjacent to the die; and
an encapsulant extending from the dam to the die, wherein the encapsulant is located between the dam and the die in a direction parallel with a major surface of the die.