US 12,253,483 B1
Methods and systems for manufacturing semiconductor devices
Faraz Najafi, San Francisco, CA (US); and Chia-Jung Chung, Sunnyvale, CA (US)
Assigned to PSIQUANTUM CORP., Palo Alto, CA (US)
Filed by PsiQuantum Corp., Palo Alto, CA (US)
Filed on Feb. 16, 2023, as Appl. No. 18/110,848.
Application 18/110,848 is a continuation of application No. 16/575,282, filed on Sep. 18, 2019, granted, now 11,719,653.
Claims priority of provisional application 62/734,942, filed on Sep. 21, 2018.
This patent is subject to a terminal disclaimer.
Int. Cl. G01N 23/207 (2018.01); H10N 60/01 (2023.01)
CPC G01N 23/2076 (2013.01) [H10N 60/0408 (2023.02); H10N 60/0436 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A method of manufacturing, comprising:
manufacturing a first superconductor device;
generating x-ray diffraction spectra data from the first superconductor device;
identifying a first peak ratio between a first phase peak and a second phase peak in the x-ray diffraction spectra data;
generating additional x-ray diffraction spectra data from a second superconductor device;
identifying a second peak ratio of the additional x-ray diffraction spectra data from the second superconductor device;
adjusting a manufacturing parameter based on the first peak ratio and the second peak ratio; and
manufacturing a third superconductor device based on the adjusted manufacturing parameter.