US 12,252,810 B2
SiC substrate and SiC ingot
Masato Ito, Ichihara (JP); and Hiromasa Suo, Ichihara (JP)
Assigned to Resonac Corporation, Tokyo (JP)
Filed by Resonac Corporation, Tokyo (JP)
Filed on Feb. 14, 2024, as Appl. No. 18/442,077.
Application 18/442,077 is a continuation of application No. 18/115,346, filed on Feb. 28, 2023, granted, now 11,939,699.
Claims priority of application No. 2022-090456 (JP), filed on Jun. 2, 2022.
Prior Publication US 2024/0183072 A1, Jun. 6, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 29/36 (2006.01); C01B 32/956 (2017.01)
CPC C30B 29/36 (2013.01) [C01B 32/956 (2017.08); C01P 2006/40 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A SiC substrate,
wherein, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [−1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [−1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 0.5 mΩ·cm or less, and
the diameter is 149 mm or more.