US 12,252,809 B2
SiC substrate and SiC epitaxial wafer
Yoshitaka Nishihara, Tokyo (JP); and Hiromasa Suo, Tokyo (JP)
Assigned to Resonac Corporation, Tokyo (JP)
Filed by Resonac Corporation, Tokyo (JP)
Filed on May 5, 2023, as Appl. No. 18/143,665.
Claims priority of application No. 2022-089091 (JP), filed on May 31, 2022.
Prior Publication US 2024/0003053 A1, Jan. 4, 2024
Int. Cl. C30B 29/36 (2006.01); C01B 32/956 (2017.01); H01L 29/16 (2006.01)
CPC C30B 29/36 (2013.01) [C01B 32/956 (2017.08); H01L 29/1608 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A SiC substrate,
wherein, in a case where the SiC substrate is supported on an inner periphery by an inner peripheral support surface positioned to overlap a circumference having a radius of 17.5 mm from a center, the SiC substrate deflects upward,
in a case where a plane connecting first points of an upper surface overlapping the inner peripheral support surface when seen in a thickness direction is defined as a first reference plane, and an upper side of the first reference plane is defined as a positive side, a bow is less than 40 μm and
a diameter is 145 mm or more.