US 12,252,807 B2
Process for obtaining a nitride layer
Guy Feuillet, Saint-Martin d'Uriage (FR); Blandine Alloing, Valbonne (FR); Virginie Brandli, Valbonne (FR); Benoit Mathieu, Grenoble (FR); and Jesus Zuniga Perez, Biot (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR)
Appl. No. 16/956,374
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR)
PCT Filed Dec. 24, 2018, PCT No. PCT/EP2018/086865
§ 371(c)(1), (2) Date Feb. 10, 2021,
PCT Pub. No. WO2019/122461, PCT Pub. Date Jun. 27, 2019.
Claims priority of application No. 17 63186 (FR), filed on Dec. 22, 2017.
Prior Publication US 2021/0164126 A1, Jun. 3, 2021
Int. Cl. C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01)
CPC C30B 25/186 (2013.01) [C30B 25/183 (2013.01); C30B 29/406 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A process for obtaining a nitride (N) layer optionally obtained from gallium (Ga), indium (In), and/or aluminum (Al), the process comprising:
on a stack comprising a substrate and, successively disposed from the substrate, a first layer, as a creep layer comprising a material having a glass transition temperature, Tglass transition, and a second layer, as a crystalline layer, which is crystalline and different from the creep layer, forming pads by etching at least the crystalline layer and at least a portion of the creep layer so that: (i) each pad comprises: (i-a) a first segment, as a creep segment, formed by at least a portion of the creep layer; and (i-b) a second crystalline segment, as a crystalline segment, formed by the crystalline layer and surmounting the creep segment; and each pad comprises a section whose maximum dimension is in a range of from 10 to 500 nm; and
growing by epitaxy a crystallite on at least some of the pads and continuing the epitaxial growth of crystallites at least until coalescence of the crystallites carried by two adjacent pads, so as to form the nitride layer,
wherein the growing by epitaxy is carried out at a temperature Tepitaxy, corresponding to formula (1):
Teptaxy≥k1×Tglass transition  (1),
wherein k1≥0.8.