US 12,252,803 B2
N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer
Koichi Maegawa, Tokyo (JP); Yasuhito Narushima, Tokyo (JP); Yasufumi Kawakami, Tokyo (JP); Fukuo Ogawa, Tokyo (JP); and Ayumi Kihara, Tokyo (JP)
Assigned to SUMCO CORPORATION, Tokyo (JP)
Filed by SUMCO CORPORATION, Tokyo (JP)
Filed on May 25, 2023, as Appl. No. 18/202,024.
Application 18/202,024 is a division of application No. 16/605,320, granted, now 11,702,760, previously published as PCT/JP2018/011125, filed on Mar. 20, 2018.
Claims priority of application No. 2017-086530 (JP), filed on Apr. 25, 2017; and application No. 2017-086532 (JP), filed on Apr. 25, 2017.
Prior Publication US 2023/0295835 A1, Sep. 21, 2023
Int. Cl. C30B 15/04 (2006.01); C30B 15/10 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01); H01L 21/02 (2006.01)
CPC C30B 15/04 (2013.01) [C30B 15/10 (2013.01); C30B 29/06 (2013.01); C30B 35/002 (2013.01); C30B 35/007 (2013.01); H01L 21/02002 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A producing method of an n-type monocrystalline silicon by pulling up the n-type monocrystalline silicon from a silicon melt comprising a main dopant in a form of arsenic and growing the n-type monocrystalline silicon according to a Czochralski process, wherein:
the n-type monocrystalline silicon is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.0-fold relative to a straight-body diameter of the n-type monocrystalline silicon, in which a part of the n-type monocrystalline silicon exhibits an electrical resistivity ranging from 1.7 mΩcm to 2.0 mΩcm and the straight-body diameter of the n-type monocrystalline silicon ranges from 301 mm to 330 mm.