US 12,252,788 B2
Method for forming thin film
Changbong Yeon, Seongnam-si (KR); Jaesun Jung, Seongnam-si (KR); Hyeran Byun, Seongnam-si (KR); Taeho Song, Seongnam-si (KR); Sojung Kim, Seongnam-si (KR); and Seokjong Lee, Seongnam-si (KR)
Assigned to SOULBRAIN CO., LTD., Seongnam-si (KR)
Filed by SOULBRAIN CO., LTD., Seongnam-si (KR)
Filed on Jan. 6, 2020, as Appl. No. 16/734,423.
Claims priority of application No. 10-2019-0118417 (KR), filed on Sep. 25, 2019; and application No. 10-2019-0137838 (KR), filed on Oct. 31, 2019.
Prior Publication US 2021/0087683 A1, Mar. 25, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/04 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01)
CPC C23C 16/45544 (2013.01) [C23C 16/303 (2013.01); C23C 16/34 (2013.01); C23C 16/405 (2013.01); C23C 16/45534 (2013.01); H01L 21/28568 (2013.01); H01L 21/76841 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for forming a thin film comprising steps of:
i) adsorbing a growth inhibitor for forming a thin film on a surface of a substrate; and ii) adsorbing a metal film precursor, metal oxide film precursor or metal nitride film precursor on a surface of a substrate on which the growth inhibitor is adsorbed, wherein the growth inhibitor for forming a thin film is represented by Chemical Formula 1 below, and the metal is at least one selected from a group consisting of tungsten, cobalt, chrome, aluminum, hafnium, vanadium, niobium, germanium, lanthanide, actinoids, gallium, tantalum, zirconium, ruthenium, copper, titanium, nickel, iridium and molybdenum,
AnBmXo
wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1,
wherein the growth inhibitor represented by Chemical Formula 1 is one or more selected from the group consisting of 1,2,3-trichloropropane and 1, 2-dichlorobenzene.