US 12,252,783 B2
Chemical vapor deposition for uniform tungsten growth
Pin-Wen Chen, Keelung (TW); Yuan-Chen Hsu, Hsinchu (TW); and Ken-Yu Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 6, 2021, as Appl. No. 17/444,585.
Prior Publication US 2023/0038744 A1, Feb. 9, 2023
Int. Cl. C23C 16/14 (2006.01); C23C 16/52 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01)
CPC C23C 16/14 (2013.01) [C23C 16/52 (2013.01); H01L 21/28079 (2013.01); H01L 21/28568 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a flow of a processing vapor into a chemical vapor deposition (CVD) processing chamber,
wherein the flow of the processing vapor includes a combination of tungsten hexafluoride and a carrier gas; and
performing a CVD operation to form a tungsten layer on a semiconductor substrate using the flow of the processing vapor,
wherein the flow of the processing vapor is provided in a single deposition cycle such that a flow rate of the tungsten hexafluoride in the flow of the processing vapor is in a range of approximately 1 standard cubic centimeter per minute (SCCM) to about 10 SCCM to promote substantially uniform growth of the tungsten layer to achieve a deposition rate of approximately 3 angstroms per second and to achieve a surface roughness of the tungsten layer that is in a range of approximately 0.9 root mean squared (RMS) roughness to approximately 1.2 RMS roughness.