US 12,252,778 B2
Apparatus for and method of manufacturing semiconductor device
Keewon Kim, Suwon-si (KR); Daehan Kim, Suwon-si (KR); and Minkyung Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO, LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 9, 2022, as Appl. No. 17/930,728.
Application 17/930,728 is a division of application No. 16/714,344, filed on Dec. 13, 2019, granted, now 11,512,389.
Claims priority of application No. 10-2019-0032027 (KR), filed on Mar. 20, 2019; and application No. 10-2019-0075870 (KR), filed on Jun. 25, 2019.
Prior Publication US 2022/0411916 A1, Dec. 29, 2022
Int. Cl. C23C 14/54 (2006.01); C23C 14/24 (2006.01); C23C 14/56 (2006.01); H10K 10/46 (2023.01)
CPC C23C 14/543 (2013.01) [C23C 14/24 (2013.01); C23C 14/56 (2013.01); H10K 10/462 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
heating an organic source in an evaporator to provide a source gas on a substrate;
pumping the source gas, a derived molecule produced from the organic source, and air through an exhaust line connected to a chamber using a low vacuum pump and a high vacuum pump having a pumping pressure that is greater than that of the low vacuum pump;
using an analyzer to detect the derived molecule, the analyzer being connected to the exhaust line; and
determining whether or not a partial pressure of the derived molecule is equal has increased to a reference partial pressure,
wherein the exhaust line comprises:
a roughing line connecting the low vacuum pump to the chamber, bypassing the high vacuum pump, and having a roughing valve; and
a foreline branched from the roughing line between the low vacuum pump and the roughing valve, connecting the high vacuum pump and the low vacuum pump to the chamber sequentially, and having a first foreline valve between the high vacuum pump and the low vacuum pump, and
wherein the foreline comprises:
a first foreline connecting the high vacuum pump to the chamber, having a second foreline valve between the chamber and the high vacuum pump; and
a second foreline branched from the first foreline between the second foreline valve and the high vacuum pump, connected to the chamber, and having a third foreline valve, and
wherein the analyzer is connected to the second foreline between the third foreline valve and the chamber.