US 12,252,777 B2
Physical vapor deposition (PVD) system and method of processing target
Sheng-Ying Wu, Taichung (TW); Ming-Hsien Lin, Taichung (TW); Po-Wei Wang, Taichung (TW); and Hsiao-Feng Lu, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed on May 7, 2021, as Appl. No. 17/314,261.
Prior Publication US 2022/0356560 A1, Nov. 10, 2022
Int. Cl. C23C 14/34 (2006.01); C23C 14/02 (2006.01); C23C 14/54 (2006.01); C23C 14/56 (2006.01); H01J 37/34 (2006.01)
CPC C23C 14/541 (2013.01) [C23C 14/028 (2013.01); C23C 14/3407 (2013.01); C23C 14/564 (2013.01); H01J 37/3414 (2013.01)] 20 Claims
OG exemplary drawing
 
8. A physical vapor deposition (PVD) system, comprising:
a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer, wherein the PVD chamber comprises an inlet configured to introduce a first gas into the PVD chamber;
a shielding structure disposed in the PVD chamber and configured to inhibit dissipation of the first gas from the PVD volume; and
a gas conducting structure disposed in the PVD chamber and configured to conduct the first gas into the PVD volume, wherein:
the gas conducting structure is between a wall of the shielding structure and the wafer;
the shielding structure defines a path from the inlet to the gas conducting structure, the path having at least one curve between the inlet and the gas conducting structure that changes a direction of the first gas;
the first gas is released into the PVD volume after flowing through the path defined by the shielding structure;
one or more openings are defined in the gas conducting structure;
a first opening of the one or more openings extends from an inner sidewall of the gas conducting structure to an outer sidewall of the gas conducting structure opposite the inner sidewall of the gas conducting structure; and
the inner sidewall faces the PVD volume.