	US 12,252,775 B2
	Sputtering target, method for manufacturing sputtering target, and method for forming thin film
Shunpei Yamazaki, Tokyo (JP); Tetsunori Maruyama, Kanagawa (JP); Yuki Imoto, Kanagawa (JP); Hitomi Sato, Kanagawa (JP); Masahiro Watanabe, Tochigi (JP); Mitsuo Mashiyama, Tochigi (JP); Kenichi Okazaki, Tochigi (JP); Motoki Nakashima, Kanagawa (JP); and Takashi Shimazu, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Apr. 12, 2024, as Appl. No. 18/633,854.
Application 18/633,854 is a continuation of application No. 17/228,847, filed on Apr. 13, 2021, granted, now 11,959,165.
Application 17/228,847 is a continuation of application No. 16/285,297, filed on Feb. 26, 2019, granted, now 11,066,739.
Application 16/285,297 is a continuation of application No. 15/189,104, filed on Jun. 22, 2016, granted, now 10,889,888.
Application 15/189,104 is a continuation of application No. 13/488,626, filed on Jun. 5, 2012, granted, now 9,382,611.
Claims priority of application No. 2011-128750 (JP), filed on Jun. 8, 2011; and application No. 2011-274954 (JP), filed on Dec. 15, 2011.
Prior Publication US 2024/0254616 A1, Aug. 1, 2024
Int. Cl. C23C 14/34 (2006.01); B28B 11/24 (2006.01); C04B 35/453 (2006.01); C04B 35/64 (2006.01); C23C 14/08 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)

CPC C23C 14/3414 (2013.01) [B28B 11/243 (2013.01); C04B 35/453 (2013.01); C04B 35/64 (2013.01); C23C 14/08 (2013.01); C23C 14/086 (2013.01); C23C 14/345 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/76 (2013.01)]

6 Claims

1. A semiconductor device comprising:

a first transistor comprising a silicon film;

a second transistor comprising an oxide semiconductor film; and

a capacitor,

wherein a first insulating film is provided over the silicon film,

wherein the first insulating film comprises a region functioning as a gate insulating film of the first transistor,

wherein a first conductive film is provided over the first insulating film,

wherein the first conductive film comprises a region functioning as a gate electrode of the first transistor,

wherein a second insulating film is in contact with a side surface of the first conductive film,

wherein a third insulating film comprises a region in contact with the second insulating film,

wherein the oxide semiconductor film is provided over the third insulating film,

wherein a fourth insulating film is provided over the oxide semiconductor film,

wherein the fourth insulating film comprises a region functioning as a gate insulating film of the second transistor,

wherein a second conductive film is provided over the fourth insulating film,

wherein the second conductive film comprises a region functioning as a gate electrode of the second transistor,

wherein a fifth insulating film is in contact with a side surface of the second conductive film,

wherein a third conductive film comprises a region in contact with the fifth insulating film and a region in contact with the fourth insulating film,

wherein the third conductive film comprises a region functioning as one of a source electrode and a drain electrode of the second transistor,

wherein a fourth conductive film comprises a region in contact with the fifth insulating film and a region in contact with the fourth insulating film,

wherein the fourth conductive film comprises a region functioning as the other of the source electrode and the drain electrode of the second transistor and one electrode of the capacitor,

wherein a sixth insulating film is provided over the second conductive film, the third conductive film, and the fourth conductive film,

wherein a fifth conductive film is provided over the sixth insulating film,

wherein the fifth conductive film comprises a region functioning as the other electrode of the capacitor,

wherein the silicon film comprises a region functioning as a channel of the first transistor,

wherein the oxide semiconductor film comprises a region functioning as a channel of the second transistor,

wherein the fourth conductive film comprises a region in contact with a top surface of the first conductive film,

wherein the fifth conductive film comprises a region overlapping with the first conductive film with the sixth insulating film and the fourth conductive film therebetween, and

wherein the fifth conductive film comprises a region overlapping with the channel of the first transistor, with the sixth insulating film, the fourth conductive film, and the first conductive film therebetween.