US 12,252,766 B2
Composite material, heat sink and semiconductor device
Masatoshi Majima, Osaka (JP); Gouhei Toyoshima, Yamagata (JP); and Kouichi Takashima, Yamagata (JP)
Assigned to Sumitomo Electric Industries, Ltd., Osaka (JP); and A.L.M.T. Corp., Tokyo (JP)
Appl. No. 17/917,006
Filed by SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP); and A.L.M.T. Corp., Tokyo (JP)
PCT Filed Mar. 3, 2021, PCT No. PCT/JP2021/008039
§ 371(c)(1), (2) Date Oct. 5, 2022,
PCT Pub. No. WO2021/205782, PCT Pub. Date Oct. 14, 2021.
Claims priority of application No. 2020-070227 (JP), filed on Apr. 9, 2020.
Prior Publication US 2023/0167528 A1, Jun. 1, 2023
Int. Cl. C22C 26/00 (2006.01); C25D 3/12 (2006.01); C25D 7/00 (2006.01); H01L 23/373 (2006.01)
CPC C22C 26/00 (2013.01) [C25D 3/12 (2013.01); C25D 7/00 (2013.01); H01L 23/3732 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A composite material, comprising:
a plurality of diamond particles;
copper; and
at least one first element selected from the group consisting of silicon, chromium, cobalt, nickel, molybdenum, titanium, vanadium, niobium, tantalum and tungsten,
wherein a content rate of the first element based on the total mass of the copper and the first element is 150 ppm or higher and 1,998 ppm or lower.