US 12,252,393 B2
Resonance device and resonance device manufacturing method
Masakazu Fukumitsu, Nagaokakyo (JP); and Yoshiyuki Higuchi, Nagaokakyo (JP)
Assigned to MURATA MANUFACTURING CO., LTD., Nagaokakyo (JP)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP)
Filed on Sep. 8, 2021, as Appl. No. 17/469,561.
Application 17/469,561 is a continuation of application No. PCT/JP2020/004014, filed on Feb. 4, 2020.
Claims priority of application No. 2019-113800 (JP), filed on Jun. 19, 2019.
Prior Publication US 2021/0403316 A1, Dec. 30, 2021
Int. Cl. B81B 3/00 (2006.01); B81C 1/00 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/24 (2006.01)
CPC B81B 3/0021 (2013.01) [B81C 1/00269 (2013.01); H03H 3/02 (2013.01); H03H 9/02 (2013.01); H03H 9/24 (2013.01); B81B 2207/093 (2013.01); B81C 2203/0118 (2013.01); B81C 2203/019 (2013.01); B81C 2203/036 (2013.01); B81C 2203/037 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A resonance device comprising:
a first substrate including a resonator;
a second substrate sealed to the first substrate so as to define a vibration space of the resonator;
a first eutectic reaction layer between the first substrate and the second substrate, the first eutectic reaction layer extending to an inside of the second substrate and electrically connected to the second substrate; and
an insulating layer on a substantially entire surface of the resonator of the first substrate, wherein
the first eutectic reaction layer grounds the second substrate, and is connected to the first substrate with the insulating layer interposed between the first eutectic reaction layer and the first substrate.