US 11,930,710 B2
Hybrid structure and a method for manufacturing the same
Didier Landru, Le Champ-près-Froges (FR)
Assigned to SOITEC, Bernin (FR)
Filed by Soitec, Bernin (FR)
Filed on May 16, 2022, as Appl. No. 17/663,569.
Application 17/663,569 is a continuation of application No. 15/769,690, granted, now 11,349,065, previously published as PCT/FR2016/052674, filed on Oct. 17, 2016.
Claims priority of application No. 1559993 (FR), filed on Oct. 20, 2015.
Prior Publication US 2022/0278269 A1, Sep. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 30/073 (2023.01); H03H 9/02 (2006.01); H10N 30/00 (2023.01); H10N 30/50 (2023.01); H10N 30/88 (2023.01)
CPC H10N 30/073 (2023.02) [H03H 9/02574 (2013.01); H10N 30/10513 (2023.02); H10N 30/508 (2023.02); H10N 30/88 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing a hybrid structure comprising an effective layer having an effective thickness on a support substrate having a support thickness, wherein a coefficient of thermal expansion of the support substrate is less than a coefficient of thermal expansion of the effective layer, the method comprising:
providing a bonded structure comprising a donor substrate on the support substrate, a bonding interface between the donor substrate and the support substrate, and at least one non-bonded area at the bonding interface;
thinning the donor substrate to form a thinned layer having an intermediate thickness on the support substrate, the thinned layer and the support substrate collectively forming a thinned structure;
applying a heat treatment to the thinned structure at an annealing temperature;
after applying the heat treatment, thinning the thinned layer to form the effective layer with the effective thickness; and
before thinning the donor substrate to form a thinned layer with the effective thickness, determining a range of intermediate thicknesses, the range being defined by a threshold thickness and a maximum thickness,
wherein input parameters of the first sensitivity model comprise the support thickness, the coefficient of thermal expansion of the support substrate, a coefficient of thermal expansion of the donor substrate, the annealing temperature, and a maximum size of the at least one non-bonded area at the bonding interface,
wherein the one or more non-bonded areas comprise a radius within a range of from 1 micron to 1000 microns.