US 11,930,670 B2
Display device including an interlayer insulating layer selectively overlapping an active layer of a driving transistor and method for manufacturing the same
Sang Woo Sohn, Yongin-si (KR); Saeroonter Oh, Seoul (KR); Joon Seok Park, Yongin-si (KR); Young Joon Choi, Busan (KR); Su Hyun Kim, Seongnam-si (KR); and Jun Hyung Lim, Seoul (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR); and Industry-University Cooperation Foundation Hanyang University ERICA Campus, Ansan-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR); and Industry-University Cooperation Foundation Hanyang University ERICA Campus, Ansan-si (KR)
Filed on May 6, 2021, as Appl. No. 17/313,046.
Claims priority of application No. 10-2020-0077987 (KR), filed on Jun. 25, 2020.
Prior Publication US 2021/0408195 A1, Dec. 30, 2021
Int. Cl. H10K 59/126 (2023.01); G09G 3/3225 (2016.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01)
CPC H10K 59/126 (2023.02) [G09G 3/3225 (2013.01); H10K 59/131 (2023.02); H10K 71/00 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A display device comprising:
a substrate;
a driving transistor including a first active layer and a switching transistor including a second active layer, the first active layer and the second active layer being disposed on the substrate;
a first gate insulating layer disposed on the first active layer of the driving transistor and a second gate insulating layer disposed on the second active layer of the switching transistor;
a first gate electrode and a second gate electrode disposed on the first gate insulating layer and the second gate insulating layer to overlap the first active layer of the driving transistor and the second active layer of the switching transistor, respectively;
a first interlayer insulating layer disposed on the first gate electrode and the second gate electrode; and
a second interlayer insulating layer disposed on the first interlayer insulating layer to overlap the first active layer without overlapping the second active layer in a plan view,
wherein the second insulating layer is disposed between a first source electrode and a first drain electrode which are respectively connected to a source region and a drain region of the first active layer, and
wherein the second interlayer insulating layer is spaced apart from at least one of the first source electrode and the first drain electrode.