US 11,930,665 B2
Display substrate and manufacturing method thereof, and display apparatus
Yong Hu, Beijing (CN); Zerui Zhang, Beijing (CN); Dali Li, Beijing (CN); and Xin Luo, Beijing (CN)
Assigned to MIANYANG BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Sichuan (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/789,543
Filed by MIANYANG BOE OPTOELECTRONICS TECHNOLOGY CO.,LTD., Sichuan (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Jul. 30, 2021, PCT No. PCT/CN2021/109730
§ 371(c)(1), (2) Date Jun. 28, 2022,
PCT Pub. No. WO2022/160635, PCT Pub. Date Aug. 4, 2022.
Claims priority of application No. 202110121161.6 (CN), filed on Jan. 28, 2021.
Prior Publication US 2023/0345793 A1, Oct. 26, 2023
Int. Cl. G06F 3/041 (2006.01); G06F 3/044 (2006.01); H10K 50/844 (2023.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/122 (2023.01); H10K 59/123 (2023.01); H10K 59/124 (2023.01); H10K 59/131 (2023.01); H10K 59/80 (2023.01); H10K 71/00 (2023.01); H01L 27/12 (2006.01); H10K 59/40 (2023.01)
CPC H10K 59/1213 (2023.02) [G06F 3/0412 (2013.01); G06F 3/0446 (2019.05); H10K 50/844 (2023.02); H10K 59/1201 (2023.02); H10K 59/1216 (2023.02); H10K 59/122 (2023.02); H10K 59/123 (2023.02); H10K 59/124 (2023.02); H10K 59/131 (2023.02); H10K 59/873 (2023.02); H10K 71/00 (2023.02); G06F 3/04164 (2019.05); H01L 27/1255 (2013.01); H10K 59/40 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A display substrate having a display region and a peripheral region, the display substrate comprising:
a substrate;
a first dam and a second dam that are located on a side of the substrate and located in the peripheral region; wherein the second dam is farther from the display region than the first dam, and a height of the second dam is greater than a height of the first dam; and
a connection portion located between the first dam and the second dam, wherein the connection portion connects the first dam and the second dam; and a height of the connection portion is less than the height of the first dam; wherein
at least a portion of the first dam, at least a portion of the connection portion and at least a portion of the second dam are of an integrative structure; and
the first dam includes a plurality of first blocking layers that are stacked in sequence, and the second dam includes a plurality of second blocking layers that are stacked in sequence; and a total number of the second blocking layers is greater than a total number of the first blocking layers; and the connection portion includes one or more connection layers; and a total number of the one or more connection layers is less than the total number of the first blocking layers; or
the first dam includes a plurality of first blocking layers that are stacked in sequence, the second dam includes a plurality of second blocking layers that are stacked in sequence, and a total number of the second blocking layers is greater than a total number of the first blocking layers; the connection portion includes one or more connection layers, and a total number of the one or more connection layers is less than the total number of the first blocking layers; and at least one of the plurality of first blocking layers proximate to the substrate and at least one of the plurality, of second blocking layers proximate to the substrate are connected through at least one connection layer.