US 11,929,743 B2
High-voltage semiconductor switch
David A. Deen, Edina, MN (US); Paul M. Werking, Phoenix, AZ (US); and Christopher Langer, Highlands Ranch, CO (US)
Assigned to QUANTINUUM LLC, Broomfield, CO (US)
Filed by Quantinuum LLC, Broomfield, CO (US)
Filed on Jul. 7, 2022, as Appl. No. 17/859,672.
Claims priority of provisional application 63/225,801, filed on Jul. 26, 2021.
Prior Publication US 2023/0026029 A1, Jan. 26, 2023
Int. Cl. H03K 17/687 (2006.01); G06N 10/40 (2022.01)
CPC H03K 17/6871 (2013.01) [G06N 10/40 (2022.01)] 20 Claims
OG exemplary drawing
 
1. A high-voltage semiconductor switch comprising:
a first switch subcircuit comprising one or more FET circuits and a first voltage-shifting FET, wherein a first FET circuit of the first switch subcircuit comprises a first FET and a second FET;
a second switch sub circuit comprising one or more FET circuits and a second voltage-shifting transistor, wherein a first FET circuit of the second switch subcircuit comprises a third FET and a fourth FET;
wherein each of the first FET, the second FET, the third FET, the fourth FET, the first voltage-shifting FET, and the second voltage-shifting transistor comprises a gate, a drain, and a source;
wherein:
the gate of the first FET and the gate of the second FET are connected to a gate terminal of the first switch subcircuit;
the gate of the third FET and the gate of the fourth FET are connected to a gate terminal of the second switch subcircuit;
the source of the first FET, the source of the second FET, and the gate of the first voltage-shifting FET are connected; and
the source of the third FET, the source of the fourth FET, and the gate of the second voltage-shifting FET are connected; and
the high-voltage semiconductor switch further comprising:
an input terminal connected to the drain of the first FET and the drain of the fourth FET; and
an output terminal connected to the drain of the second FET and the drain of the third FET.