CPC H01M 4/583 (2013.01) [H01M 4/0428 (2013.01); H01M 4/366 (2013.01); H01M 4/38 (2013.01); H01M 4/48 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01)] | 20 Claims |
1. A method of synthesizing vertically aligned carbon nanotubes (VACNTs), the method comprising:
providing a pristine nickel foam (Ni—F) substrate in a reaction chamber;
lowering a pressure of the reaction chamber to below 1 Torr and providing a carbon precursor gas to the chamber while direct current (DC) plasma is applied to perform a plasma-enhanced chemical vapor deposition (PECVD) process to synthesize the VACNTs directly on the pristine Ni—F substrate; and
performing a physical vapor deposition process or a chemical vapor deposition process on the VACNTs connected directly to the Ni—F substrate to coat the VACNTs with nanoparticles such that the VACNTs have a coating of the nanoparticles on respective outer walls thereof.
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