CPC H01M 4/386 (2013.01) [H01M 4/134 (2013.01); H01M 4/366 (2013.01); H01M 4/663 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01)] | 12 Claims |
1. A silicon-carbon complex, comprising:
carbon-based particles; and
silicon-based particles,
wherein the silicon-based particles are dispersed and positioned on surfaces of the carbon-based particles,
the carbon-based particles have a specific surface area of 0.4 m2/g to 1.5 m2/g and a tap density of 0.7 g/cc to 1.0 g/cc, and
the silicon-based particles are doped with one or more elements selected from the group consisting of Mg, Li, Ca, and Al,
wherein the carbon-based particles are spherical artificial graphite secondary particles assembled of carbon-based primary particles, or the carbon-based particles are flake-type artificial graphite particles assembled of plate-type carbon-based primary particles,
wherein the silicon-based particles doped with one or more elements comprise the one or more elements in an amount of 0.5 wt % to 30 wt % based upon a total weight of the silicon-based particles.
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