CPC H01M 4/386 (2013.01) [H01M 4/131 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/485 (2013.01); H01M 4/587 (2013.01); H01M 4/625 (2013.01); H01M 10/052 (2013.01); H01M 2004/027 (2013.01); H01M 2004/028 (2013.01)] | 9 Claims |
1. A negative electrode active material particle comprising:
a silicon-based compound comprising SiOx, wherein 0.5<x<1.3;
an amorphous carbon layer disposed on the silicon-based compound;
a graphene layer disposed on the amorphous carbon layer; and
at least one cavity present on at least a portion of a surface of the amorphous carbon layer and positioned between the amorphous carbon layer and the graphene layer,
wherein the graphene layer has a thickness of 0.5 nm to 200 nm,
wherein the silicon-based compound has an average particle diameter (D50) in a range of 5 μm to 20 μm, and
wherein an outer surface of the graphene layer is spherical.
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