US 11,929,446 B2
Detector material and preparation method thereof
Qun Hao, Changchun (CN); Zhipeng Wei, Changchun (CN); Jilong Tang, Changchun (CN); Huimin Jia, Changchun (CN); Lei Liao, Changchun (CN); Kexue Li, Changchun (CN); Fengyuan Lin, Changchun (CN); Rui Chen, Shenzhen (CN); Shichen Su, Guangzhou (CN); and Shuangpeng Wang, Changchun (CN)
Assigned to CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY, Changchun (CN)
Appl. No. 18/033,637
Filed by CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY, Changchun (CN)
PCT Filed Nov. 8, 2022, PCT No. PCT/CN2022/130475
§ 371(c)(1), (2) Date Apr. 25, 2023,
PCT Pub. No. WO2023/124547, PCT Pub. Date Jul. 6, 2023.
Claims priority of application No. 202111658225.2 (CN), filed on Dec. 30, 2021.
Prior Publication US 2023/0395743 A1, Dec. 7, 2023
Int. Cl. H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/102 (2006.01); H01L 33/00 (2010.01)
CPC H01L 31/1844 (2013.01) [H01L 31/0304 (2013.01); H01L 31/03046 (2013.01); H01L 31/0352 (2013.01); H01L 31/035236 (2013.01); H01L 31/102 (2013.01); H01L 31/18 (2013.01); H01L 33/00 (2013.01); Y02P 70/50 (2015.11)] 15 Claims
OG exemplary drawing
 
1. A preparation method of a detector material, comprising the following steps:
(1) growing a gallium compound on a surface of an initial substrate to obtain a buffer layer, wherein the initial substrate is a gallium arsenide substrate; and the gallium compound is gallium arsenide or gallium antimonide;
(2) depositing silicon dioxide on a surface of the buffer layer to obtain a silicon dioxide film;
(3) conducting photolithography and etching on the silicon dioxide film sequentially to obtain a strip growth layer, wherein widths of strip growth regions of the strip growth layer change continuously; and
(4) growing a quantum well or superlattice on the strip growth layer to obtain the detector material, wherein the quantum well is an InxGaAs/GaAs quantum well, and the superlattice is an InAs/GaSb superlattice.