US 11,929,436 B2
Thin transistor including a hydrogen-blocking dielectric barrier and methods for forming the same
Neil Murray, Hsinchu (TW); Hung-Wei Li, Hsinchu (TW); and Mauricio Manfrini, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Sep. 7, 2021, as Appl. No. 17/467,478.
Claims priority of provisional application 63/144,493, filed on Feb. 2, 2021.
Prior Publication US 2022/0246767 A1, Aug. 4, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/78606 (2013.01) [H01L 21/02178 (2013.01); H01L 21/02565 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an insulating matrix layer including an opening therein and overlying a substrate;
a hydrogen-blocking dielectric barrier layer extending over a horizontal plane including a bottom surface of the insulating matrix layer;
a gate electrode located within the opening on the hydrogen-blocking dielectric barrier layer, wherein the hydrogen-blocking dielectric barrier layer comprises a first horizontally-extending portion that underlies the gate electrode;
a stack of a gate dielectric and a semiconducting metal oxide plate overlying a top surface of the gate electrode and horizontally-extending portions of the hydrogen-blocking dielectric barrier layer that overlie the insulating matrix layer; and
a source electrode and a drain electrode contacting respective portions of a top surface of the semiconducting metal oxide plate.