US 11,929,434 B2
High voltage switch device
Chih-Hsin Chen, Hsinchu County (TW); Shih-Chen Wang, Hsinchu County (TW); Tsung-Mu Lai, Hsinchu County (TW); Wen-Hao Ching, Hsinchu County (TW); Chun-Yuan Lo, Hsinchu County (TW); and Wei-Chen Chang, Hsinchu County (TW)
Assigned to eMemory Technology Inc., Hsin-Chu (TW)
Filed by eMemory Technology Inc., Hsin-Chu (TW)
Filed on Apr. 15, 2022, as Appl. No. 17/721,367.
Application 17/721,367 is a division of application No. 17/013,869, filed on Sep. 8, 2020, granted, now 11,335,805.
Claims priority of provisional application 62/898,560, filed on Sep. 11, 2019.
Prior Publication US 2022/0246758 A1, Aug. 4, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/7835 (2013.01) [H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/1083 (2013.01)] 5 Claims
OG exemplary drawing
 
4. A switch device, comprising:
a substrate;
a first gate structure;
a first well of a first conduction type formed in the substrate and partly under a first side of the first gate structure;
a second gate structure;
a second well of a second conduction type formed in the substrate and under the first gate structure and the second gate structure;
a first doped region of the first conduction type formed in the second well and between a second side of the first gate structure and a first side of the second gate structure; and
a second doped region of the first conduction type formed in the second well and adjacent to a second side of the second gate structure;
wherein the first conduction type and the second conduction type are of different doping polarity;
wherein when the switch device is in a second state:
the second well receives a fourth reference voltage;
the second doped region receives a first input voltage;
the second gate structure receives a second input voltage; and
the first gate structure receives an operation voltage; and
wherein an absolute value of a fifth voltage drop between the second input voltage and the fourth reference voltage and an absolute value of a sixth voltage drop between the operation voltage and the fourth reference voltage are greater than an absolute value of a seventh voltage drop between the first input voltage and the fourth reference voltage, and the absolute value of the seventh voltage drop is greater than or equal to zero.