CPC H01L 29/45 (2013.01) [H01L 21/76852 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53271 (2013.01); H01L 29/41733 (2013.01); H01L 29/41741 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/66666 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); H01L 29/7827 (2013.01); H01L 29/7853 (2013.01); H01L 2029/7858 (2013.01)] | 20 Claims |
1. A device structure, comprising:
a semiconductor mesa;
a fin extending from the semiconductor mesa and comprising a lower portion, a middle portion over the lower portion, and an upper portion over the middle portion;
a metal gate structure engaging sidewalls of the middle portion of the fin; and
an interlayer dielectric (ILD) layer wrap around the metal gate structure, the upper portion, and the lower portion.
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