CPC H01L 29/42384 (2013.01) [H01L 29/41733 (2013.01); H01L 29/41775 (2013.01); H01L 29/66742 (2013.01); H10B 12/00 (2023.02); H10B 12/01 (2023.02)] | 14 Claims |
1. A device, comprising:
a source contact and a drain contact;
a first dielectric between the source contact and the drain contact, the first dielectric having an uppermost surface at a same level as an uppermost surface of the source contact and the drain contact;
a channel under the source contact and the drain contact;
a gate electrode below the channel, the gate electrode in an area under the first dielectric that does not laterally extend under the source contact or the drain contact;
a second dielectric above the gate electrode and underneath the channel; and
an interconnect layer beneath the gate electrode, the interconnect layer extending laterally beyond the source contact and the drain contact along a direction from the source contact to the drain contact.
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