US 11,929,406 B2
Semiconductor device and method for manufacturing the same
Qiyue Zhao, Suzhou (CN); Wuhao Gao, Suzhou (CN); and Fengming Lin, Suzhou (CN)
Assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
Appl. No. 17/275,680
Filed by INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
PCT Filed Feb. 19, 2021, PCT No. PCT/CN2021/076958
§ 371(c)(1), (2) Date Mar. 12, 2021,
PCT Pub. No. WO2022/174400, PCT Pub. Date Aug. 25, 2022.
Prior Publication US 2022/0376061 A1, Nov. 24, 2022
Int. Cl. H01L 29/40 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/404 (2013.01) [H01L 21/56 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/41775 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first nitride-based semiconductor layer disposed above a substrate;
a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap greater than a bandgap of the first nitride-based semiconductor layer;
a gate electrode disposed above the second nitride-based semiconductor layer;
a first passivation layer disposed on the second nitride-based semiconductor layer and covering the gate electrode;
a first field plate disposed on the gate electrode and the first passivation layer, wherein the first passivation layer has a first portion covered with the first field plate and a second portion free from coverage of the first field plate;
a second passivation layer disposed on the first passivation layer and covering the first field plate; and
a second field plate disposed over the first field plate and the second passivation layer, wherein the second passivation layer has a first portion covered with the second field plate and a second portion is free from coverage of the second field plate, and a thickness difference between the first and second portions of the first passivation layer is less than a thickness difference between the first and second portions of the second passivation layer.