US 11,929,401 B2
Method of forming a source/drain
Chien-Wei Lee, Kaohsiung (TW); Hsueh-Chang Sung, Zhubei (TW); and Yen-Ru Lee, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 3, 2022, as Appl. No. 17/567,546.
Application 17/567,546 is a continuation of application No. 16/677,798, filed on Nov. 8, 2019, granted, now 11,217,672.
Claims priority of provisional application 62/894,392, filed on Aug. 30, 2019.
Prior Publication US 2022/0123117 A1, Apr. 21, 2022
Int. Cl. H01L 29/165 (2006.01); C30B 25/10 (2006.01); C30B 25/12 (2006.01); C30B 25/16 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/165 (2013.01) [C30B 25/10 (2013.01); C30B 25/12 (2013.01); C30B 25/165 (2013.01); H01L 21/02315 (2013.01); H01L 21/02658 (2013.01); H01L 21/02661 (2013.01); H01L 21/3247 (2013.01); H01L 29/41791 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a fin from a substrate;
forming a gate structure over the fin;
etching a source/drain recess on a side of the gate structure;
performing a smoothing process, the smoothing process comprising:
supplying hydrogen gas to a surface of the source/drain recess; and
heating the source/drain recess, wherein during heating the source/drain recess a metal layer covers a pedestal, the pedestal supporting the substrate;
following the smoothing process, performing a radical treatment process to the source/drain recess;
moving the source/drain recess to a deposition chamber; and
growing an epitaxial source/drain region in the source/drain recess.