CPC H01L 29/165 (2013.01) [C30B 25/10 (2013.01); C30B 25/12 (2013.01); C30B 25/165 (2013.01); H01L 21/02315 (2013.01); H01L 21/02658 (2013.01); H01L 21/02661 (2013.01); H01L 21/3247 (2013.01); H01L 29/41791 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01)] | 20 Claims |
1. A method comprising:
forming a fin from a substrate;
forming a gate structure over the fin;
etching a source/drain recess on a side of the gate structure;
performing a smoothing process, the smoothing process comprising:
supplying hydrogen gas to a surface of the source/drain recess; and
heating the source/drain recess, wherein during heating the source/drain recess a metal layer covers a pedestal, the pedestal supporting the substrate;
following the smoothing process, performing a radical treatment process to the source/drain recess;
moving the source/drain recess to a deposition chamber; and
growing an epitaxial source/drain region in the source/drain recess.
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