US 11,929,397 B2
Semiconductor device including trench structure and manufacturing method
Thomas Basler, Ottenhofen (DE); Caspar Leendertz, Munich (DE); and Hans-Joachim Schulze, Taufkirchen (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jan. 25, 2022, as Appl. No. 17/583,324.
Application 17/583,324 is a division of application No. 16/811,293, filed on Mar. 6, 2020, granted, now 11,276,754.
Claims priority of application No. 102019105812.0 (DE), filed on Mar. 7, 2019.
Prior Publication US 2022/0149156 A1, May 12, 2022
Int. Cl. H01L 29/08 (2006.01); H01L 21/04 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/32 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/086 (2013.01) [H01L 21/0465 (2013.01); H01L 29/063 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/32 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a silicon carbide semiconductor body comprising a source region of a first conductivity type and a body region of a second conductivity type;
a trench structure extending from a first surface into the silicon carbide semiconductor body along a vertical direction, the trench structure comprising a gate electrode and a gate dielectric,
wherein the trench structure is stripe-shaped and runs along a longitudinal direction that is perpendicular to the vertical direction,
wherein the source region comprises a first source sub-region and a second source sub-region alternately arranged along the longitudinal direction,
wherein a doping concentration profile of the first source sub-region along the vertical direction differs from a doping concentration profile of the second source sub-region along the vertical direction.