CPC H01L 28/91 (2013.01) [H01G 4/1254 (2013.01); H01L 23/5222 (2013.01); H01L 28/56 (2013.01); H01L 2221/1084 (2013.01); H01L 2221/1089 (2013.01)] | 20 Claims |
1. An integrated circuit device comprising a capacitor structure, wherein the capacitor structure includes:
a bottom electrode on a substrate;
a supporter on the bottom electrode;
a dielectric layer on the bottom electrode; and
a top electrode on the dielectric layer,
wherein the bottom electrode includes:
a base electrode layer that extends in a first direction that is perpendicular to a top surface of the substrate; and
a conductive capping layer arranged between a first side surface of the base electrode layer and the dielectric layer, and arranged between a top surface of the base electrode layer and the dielectric layer,
wherein the conductive capping layer of the bottom electrode includes niobium nitride.
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