US 11,929,393 B2
Integrated circuit devices and methods of manufacturing the same
Jungoo Kang, Seoul (KR); Hyunsuk Lee, Suwon-si (KR); Gihee Cho, Yongin-si (KR); and Sanghyuck Ahn, Daegu (KR)
Assigned to Samsung Electronics Co., Ltd., Suwoni-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 6, 2023, as Appl. No. 18/093,948.
Application 18/093,948 is a continuation of application No. 16/798,826, filed on Feb. 24, 2020, granted, now 11,569,344.
Claims priority of application No. 10-2019-0068805 (KR), filed on Jun. 11, 2019.
Prior Publication US 2023/0163164 A1, May 25, 2023
Int. Cl. H01G 4/12 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/91 (2013.01) [H01G 4/1254 (2013.01); H01L 23/5222 (2013.01); H01L 28/56 (2013.01); H01L 2221/1084 (2013.01); H01L 2221/1089 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device comprising a capacitor structure, wherein the capacitor structure includes:
a bottom electrode on a substrate;
a supporter on the bottom electrode;
a dielectric layer on the bottom electrode; and
a top electrode on the dielectric layer,
wherein the bottom electrode includes:
a base electrode layer that extends in a first direction that is perpendicular to a top surface of the substrate; and
a conductive capping layer arranged between a first side surface of the base electrode layer and the dielectric layer, and arranged between a top surface of the base electrode layer and the dielectric layer,
wherein the conductive capping layer of the bottom electrode includes niobium nitride.