US 11,929,366 B2
Semiconductor device
Sunyoung Noh, Hwaseong-si (KR); Wandon Kim, Seongnam-si (KR); Hyunbae Lee, Seoul (KR); Donggon Yoo, Suwon-si (KR); and Dong-Chan Lim, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 22, 2022, as Appl. No. 17/846,177.
Application 17/846,177 is a continuation of application No. 16/851,476, filed on Apr. 17, 2020, granted, now 11,374,001.
Claims priority of application No. 10-2019-0109083 (KR), filed on Sep. 3, 2019.
Prior Publication US 2022/0352156 A1, Nov. 3, 2022
Int. Cl. H01L 27/088 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H01L 29/06 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/3212 (2013.01); H01L 21/76802 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/7685 (2013.01); H01L 21/823475 (2013.01); H01L 23/5283 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 23/535 (2013.01); H01L 29/0673 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an interlayer dielectric layer on a substrate;
a first connection line that fills a first trench of the interlayer dielectric layer, the first trench having a first width; and
a second connection line that fills a second trench of the interlayer dielectric layer, the second trench having a second width greater than the first width, and the second connection line including:
a first metal layer that covers an inner sidewall of the second trench,
a barrier layer that covers a bottom surface of the second trench, and
a second metal layer on the first metal layer and the barrier layer,
wherein both the first metal layer and the barrier layer are in direct contact with the interlayer dielectric layer,
wherein the first connection line and the first metal layer include a first metal, and
wherein the second metal layer includes a second metal different from the first metal.