US 11,929,360 B2
Power cell for semiconductor devices
Chung-Chieh Yang, Hsinchu (TW); Chung-Ting Lu, Hsinchu (TW); and Yung-Chow Peng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 13, 2022, as Appl. No. 17/864,365.
Application 17/864,365 is a continuation of application No. 17/075,968, filed on Oct. 21, 2020, granted, now 11,410,986.
Prior Publication US 2022/0352143 A1, Nov. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/02 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01)
CPC H01L 27/0207 (2013.01) [H01L 21/76885 (2013.01); H01L 21/823871 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
an electrical circuit having a first set of circuit elements;
a first set of conductive pillars over a first side of a substrate;
a first conductive rail electrically connected to each of the first set of conductive pillars, wherein each of the first set of conductive pillars is electrically connected to each of the first set of circuit elements by the first conductive rail; and
a first plurality of power pillars extending through the substrate, wherein each of the first plurality of power pillars is electrically connected to the first conductive rail.