US 11,929,334 B2
Die-beam alignment for laser-assisted bonding
Wagno Alves Braganca, Jr., Incheon (KR); KyungOe Kim, Incheon (KR); and TaeKeun Lee, Incheon (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Oct. 12, 2020, as Appl. No. 17/068,233.
Claims priority of provisional application 62/990,668, filed on Mar. 17, 2020.
Prior Publication US 2021/0296268 A1, Sep. 23, 2021
Int. Cl. B23K 26/03 (2006.01); B23K 1/005 (2006.01); B23K 26/06 (2014.01); H01L 23/00 (2006.01); H05K 3/34 (2006.01)
CPC H01L 24/06 (2013.01) [B23K 1/0056 (2013.01); H01L 24/03 (2013.01); H05K 3/34 (2013.01); H01L 2224/0363 (2013.01); H05K 2203/107 (2013.01)] 22 Claims
OG exemplary drawing
 
5. A method of making a semiconductor device, comprising:
disposing a semiconductor die over a substrate;
disposing a beam homogenizer over the semiconductor die using a first camera, wherein a beam from the beam homogenizer impacts the semiconductor die;
calculating a positional offset of the beam relative to the semiconductor die in a first unit using image processing on an image from a second camera, wherein the second camera is a different type of camera from the first camera;
using a first calibration equation to convert the positional offset into a first distance in a second unit;
moving the beam homogenizer the first distance to center the semiconductor die fully within the beam;
calculating a rotational offset of the beam relative to the semiconductor die in a third unit;
using a second calibration equation to convert the rotational offset into a second distance in a fourth unit; and
rotating the beam homogenizer the second distance to rotationally align the beam to the semiconductor die.