US 11,929,318 B2
Package structure and method of forming the same
Chih-Hsuan Tai, Taipei (TW); Hao-Yi Tsai, Hsinchu (TW); Tsung-Hsien Chiang, Hsinchu (TW); Yu-Chih Huang, Hsinchu (TW); Chia-Hung Liu, Hsinchu (TW); Ban-Li Wu, Hsinchu (TW); Ying-Cheng Tseng, Tainan (TW); and Po-Chun Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 10, 2021, as Appl. No. 17/315,365.
Application 17/315,365 is a continuation of application No. 16/354,173, filed on Mar. 15, 2019, granted, now 11,004,786.
Prior Publication US 2021/0280511 A1, Sep. 9, 2021
Int. Cl. H01L 23/34 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/56 (2013.01); H01L 21/76898 (2013.01); H01L 23/3171 (2013.01); H01L 23/3675 (2013.01); H01L 23/481 (2013.01); H01L 23/5283 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/33 (2013.01); H01L 24/73 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/73204 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a thermal dissipation structure, comprising:
a substrate; and
a first conductive pad, disposed over the substrate;
a first encapsulant, laterally encapsulating the thermal dissipation structure;
a die, disposed on the thermal dissipation structure;
a through integrated fan-out via (TIV), landing on the first conductive pad of the thermal dissipation structure and laterally aside the die, wherein the TIV is in direct contact with the first conductive pad of the thermal dissipation structure;
a second encapsulant, laterally encapsulating the die and the TIV; and
a redistribution layer (RDL) structure, disposed on the die and the second encapsulant.