US 11,929,314 B2
Interconnect structures including a fin structure and a metal cap
Chun-Hsien Huang, Hsinchu (TW); Peng-Fu Hsu, Hsinchu (TW); Yu-Syuan Cai, Hsinchu (TW); Min-Hsiu Hung, Tainan (TW); Chen-Yuan Kao, Hsinchu County (TW); Ken-Yu Chang, Hsinchu (TW); Chun-I Tsai, Hsinchu (TW); Chia-Han Lai, Hsinchu County (TW); Chih-Wei Chang, Hsinchu (TW); and Ming-Hsing Tsai, Chu-Pei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 12, 2021, as Appl. No. 17/200,024.
Prior Publication US 2022/0293503 A1, Sep. 15, 2022
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/49822 (2013.01) [H01L 21/4828 (2013.01); H01L 23/49838 (2013.01); H01L 24/29 (2013.01); H01L 2224/29184 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a fin structure;
a first conductive structure over the fin structure;
a metal cap, substantially overlapping an entire top surface of the first conductive structure, comprising an upper surface that has a generally concave shape and that is at a first height, at a lowest portion of the metal cap, and a second height, at a highest portion of the metal cap;
a dielectric structure above the metal cap; and
a second conductive structure above the first conductive structure,
wherein sidewalls of the first conductive structure are aligned with sidewalls of the second conductive structure, and
wherein the sidewalls of the second conductive structure are in direct contact with sidewalls of the metal cap.