US 11,929,258 B2
Via connection to a partially filled trench
Shih-Ming Chang, Zhubei (TW); Chih-Ming Lai, Hsinchu (TW); Ru-Gun Liu, Zhubei (TW); Tsai-Sheng Gau, HsinChu (TW); Chung-Ju Lee, Hsinchu (TW); Tien-I Bao, Dayuan Township (TW); and Shau-Lin Shue, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 9, 2021, as Appl. No. 17/397,756.
Application 15/912,177 is a division of application No. 14/970,242, filed on Dec. 15, 2015, granted, now 9,911,623, issued on Mar. 6, 2018.
Application 17/397,756 is a continuation of application No. 16/717,461, filed on Dec. 17, 2019, granted, now 11,087,994.
Application 16/717,461 is a continuation of application No. 15/912,177, filed on Mar. 5, 2018, granted, now 10,515,823, issued on Dec. 24, 2019.
Prior Publication US 2021/0366726 A1, Nov. 25, 2021
Int. Cl. H01L 21/321 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01)
CPC H01L 21/3212 (2013.01) [H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/76807 (2013.01); H01L 21/76808 (2013.01); H01L 21/7684 (2013.01); H01L 21/76877 (2013.01); H01L 21/76885 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 21/76834 (2013.01); H01L 21/76883 (2013.01); H01L 2221/1063 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first dielectric layer, wherein the first dielectric layer includes a first conductive feature, a second conductive feature, a first polymeric feature disposed on the first conductive feature and a second polymeric feature disposed on the second conductive feature;
forming a second dielectric layer on the first dielectric layer;
forming a first trench through the second dielectric layer to expose the second polymeric feature, wherein the first polymeric feature is covered by the second dielectric layer after the forming of the first trench through the second dielectric layer to expose the second polymeric feature;
removing the exposed second polymeric feature to expose the second conductive feature, wherein the first polymeric feature is covered by the second dielectric layer after the removing of the exposed second polymeric feature to expose the second conductive feature; and
forming a third conductive feature within the first trench on the exposed second conductive feature.