CPC H01L 21/30617 (2013.01) [C09K 13/06 (2013.01)] | 21 Claims |
1. An etching solution suitable for at least partially removing aluminum nitride from a microelectronic device during manufacture of the device, the solution comprising:
water;
a cationic surfactant having a structure represented by Formula A:
wherein, each of R1, R2, R3, and R4 is independently hydrogen, a substituted or unsubstituted C1-C30 alkyl, a substituted or unsubstituted C3-C8 cycloalkyl, a substituted or unsubstituted C2-C30 alkenyl, a substituted or unsubstituted aralkyl, a substituted or unsubstituted aryl, or a substituted or unsubstituted heteroaryl, wherein not all of R1, R2, R3, and R4 are hydrogen; and
X is an anionic counterion;
a water-miscible organic solvent; and
greater than 10% by weight of base comprising potassium hydroxide,
wherein the etching solution is free of solid materials, fluoride, oxidizers, peroxides, inorganic acids, and organic acids.
|