US 11,929,254 B2
Semiconductor patterning and resulting structures
Chun-Ming Lung, Hsinchu (TW); and ChunYao Wang, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 1, 2022, as Appl. No. 18/072,896.
Application 18/072,896 is a continuation of application No. 17/151,973, filed on Jan. 19, 2021, granted, now 11,521,856.
Claims priority of provisional application 63/085,202, filed on Sep. 30, 2020.
Prior Publication US 2023/0108424 A1, Apr. 6, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 21/0332 (2013.01) [H01L 21/02164 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/302 (2013.01); H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31116 (2013.01); H01L 21/32139 (2013.01); H01L 21/823431 (2013.01); Y10S 438/947 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
depositing a hard mask over a target layer, wherein depositing the hard mask comprises:
depositing a first oxide hard mask layer having a first density; and
depositing a second oxide hard mask layer over the first oxide hard mask layer,
the second oxide hard mask layer having a second density greater than the first density;
forming a plurality of mandrels over the hard mask;
forming a plurality of spacers on sidewalls of the plurality of mandrels;
removing the plurality of mandrels;
transferring a pattern the plurality of spacers to the hard mask; and
using the hard mask to define a pattern in the target layer.