US 11,929,109 B2
Sub-word line driver placement for memory device
Yi-Tzu Chen, Hsinchu (TW); Ching-Wei Wu, Caotun Town (TW); Hau-Tai Shieh, Hsinchu (TW); and Hung-Jen Liao, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 25, 2023, as Appl. No. 18/306,762.
Application 18/306,762 is a continuation of application No. 17/687,272, filed on Mar. 4, 2022, granted, now 11,670,362.
Application 17/687,272 is a continuation of application No. 17/081,799, filed on Oct. 27, 2020, granted, now 11,361,812, issued on Jun. 14, 2022.
Prior Publication US 2023/0267989 A1, Aug. 24, 2023
Int. Cl. G11C 11/40 (2006.01); G11C 5/02 (2006.01); G11C 5/06 (2006.01); G11C 11/408 (2006.01); G11C 11/4093 (2006.01)
CPC G11C 11/4085 (2013.01) [G11C 5/025 (2013.01); G11C 5/06 (2013.01); G11C 11/4093 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system comprising:
a first group of memory cells;
a second group of memory cells;
a first sub-word line driver abutted to the first group of memory cells, wherein the first sub-word line driver is configured to apply a first control signal to the first group of memory cells; and
a second sub-word line driver abutted to the second group of memory cells, wherein the second sub-word line driver is configured to apply a second control signal to the second group of memory cells;
wherein the first group of memory cells, the first sub-word line driver, the second sub-word line driver, and the second group of memory cells are disposed next to one another in such a sequence along a lateral direction.