US 11,927,562 B2
Hydrogen potential sensor
Cesar Pascual Garcia, Esch sur Alzette (LU); and Damien Lenoble, Esch sur Alzette (LU)
Assigned to LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST), Eschsur-Alzette (LU)
Appl. No. 18/036,430
Filed by LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST), Eschsur-Alzette (LU)
PCT Filed Nov. 10, 2021, PCT No. PCT/EP2021/081253
§ 371(c)(1), (2) Date May 11, 2023,
PCT Pub. No. WO2022/112005, PCT Pub. Date Jun. 2, 2022.
Claims priority of application No. 102240 (LU), filed on Nov. 25, 2020; and application No. 102245 (LU), filed on Dec. 1, 2020.
Prior Publication US 2023/0324330 A1, Oct. 12, 2023
Int. Cl. G01N 27/414 (2006.01)
CPC G01N 27/414 (2013.01) 18 Claims
OG exemplary drawing
 
1. A pH sensor, comprising
a chamber for receiving an electrolyte solution;
a first and a second ion-sensitive field effect transistor (ISFETs), each of the first and second ISFETs having a source terminal, a drain terminal and a transistor channel extending between the source terminal and the drain terminal;
a dielectric layer with a sensing surface arranged in the chamber so as to be contactable by the electrolyte solution, the dielectric layer separating the sensing surface from the transistor channel;
a first measurement circuit configured to measure a first source-drain resistance across the transistor channel of the first ISFET;
a second measurement circuit configured to measure a second source-drain resistance across the transistor channel of the second ISFET; and
a controller;
the first and second measurement circuits including a common reference electrode, the reference electrode arranged contactable by the electrolyte solution in the chamber;
wherein the dielectric layer of first ISFET has a first thickness and the dielectric layer of the second ISFET has a second thickness different from the first thickness;
wherein the controller is operatively connected to the first and second measurement circuits and configured to determine pH of the electrolyte solution based on the first source-drain resistance and the second source-drain resistance under the constraint of a dielectric layer degradation parameter common to the first ISFET and the second ISFET.