US 11,926,922 B2
Methods for crystal growth by replacing a sublimated target source material with a candidate source material
Yu Wang, Meishan (CN); Tian Yang, Meishan (CN); Zhenxing Liang, Meishan (CN); and Min Li, Meishan (CN)
Assigned to MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Meishan (CN)
Filed by MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Sichuan (CN)
Filed on Apr. 27, 2021, as Appl. No. 17/242,263.
Application 17/242,263 is a continuation of application No. PCT/CN2020/084583, filed on Apr. 14, 2020.
Prior Publication US 2021/0317594 A1, Oct. 14, 2021
Int. Cl. C30B 23/00 (2006.01); C30B 23/06 (2006.01); C30B 29/16 (2006.01); C30B 29/36 (2006.01); C30B 29/38 (2006.01); C30B 35/00 (2006.01)
CPC C30B 23/005 (2013.01) [C30B 23/066 (2013.01); C30B 29/16 (2013.01); C30B 29/36 (2013.01); C30B 29/38 (2013.01); C30B 35/005 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for crystal growth, comprising:
placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth;
executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport;
determining whether a preset condition is satisfied during the growth of the crystal; and
in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material, wherein the replacing the sublimated target source material with the candidate source material includes:
placing the candidate source material in a first region of the apparatus for crystal growth; and
controlling, the candidate source material to push the sublimated target source material such that:
the candidate source material leaves the first region and enters the growth chamber; and
the sublimated target source material leaves the growth chamber and enters a second region of the apparatus for crystal growth.