US 11,926,897 B2
Niobium precursor compound for thin film deposition and method for forming niobium-containing thin film using same
Tae Young Lee, Suwon-Si (KR); Sung Jun Ji, Suwon-Si (KR); Shin Beom Kim, Seongnam-Si (KR); and Sun Young Baik, Incheon (KR)
Assigned to EGTM Co., Ltd., (KR)
Filed by EGTM Co., Ltd., Suwon-Si (KR)
Filed on May 25, 2022, as Appl. No. 17/752,942.
Claims priority of application No. 10-2021-0115634 (KR), filed on Aug. 31, 2021.
Prior Publication US 2023/0101446 A1, Mar. 30, 2023
Int. Cl. C23C 16/455 (2006.01); C01G 33/00 (2006.01); C23C 16/40 (2006.01)
CPC C23C 16/45553 (2013.01) [C01G 33/00 (2013.01); C23C 16/405 (2013.01)] 17 Claims
 
1. A niobium precursor compound represented by Chemical Formula 2 below:

OG Complex Work Unit Chemistry
in Chemical Formula 2,
R6 and R7 are each independently selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, R8 and R9 are each independently selected from hydrogen, a linear alkyl group having 1 to 10 carbon atoms, and a branched alkyl group having 3 to 10 carbon atoms, R10 is selected from a linear alkylene group having 1 to 20 carbon atoms and a branched alkylene group having 3 to 20 carbon atoms, and R11 and R12 are each independently selected from hydrogen and a linear alkyl group having 1 to 4 carbon atoms, and
in Chemical Formula 2, n is an integer of 1 to 5.