CPC C03C 17/36 (2013.01) [B32B 3/266 (2013.01); B32B 9/04 (2013.01); B32B 15/04 (2013.01); C03C 17/3605 (2013.01); C03C 17/3626 (2013.01); C03C 17/3649 (2013.01); C03C 17/3671 (2013.01); C23C 14/0036 (2013.01); C23C 14/0676 (2013.01); C23C 14/185 (2013.01); G02F 1/133502 (2013.01); G02F 1/13439 (2013.01); H10K 50/86 (2023.02); B32B 2307/202 (2013.01); B32B 2307/416 (2013.01); B32B 2309/105 (2013.01); G02F 1/13338 (2013.01); G02F 1/134363 (2013.01); G06F 3/041 (2013.01); G06F 3/044 (2013.01); G06F 2203/04103 (2013.01); H10K 50/805 (2023.02)] | 15 Claims |
1. A conductive structure body, comprising:
a substrate;
a metal layer provided on the substrate; and
a light reflection reducing layer provided on at least one surface of the metal layer,
wherein the light reflection reducing layer consists of MoTiaOxNy (0<a≤2, 0<x≤3, 0<y≤2, x+y>0, and a, x and y mean ratios of the number of atoms of Ti, O and N, respectively), and
wherein the light reflection reducing layer has an element content of O and N that satisfy 0<Nat %/Oat %≤0.02,
wherein the element content of O of the light reflection reducing layer is 42,5 at % or more and less than 53.9 at %,
wherein the element content of Mo of the light reflection reducing layer is 28.6 at % or more and 33.2 at %,
wherein the element content of Ti of the light reflection reducing layer is 12.7 at % or more and 14.5 at % or less, and
wherein the element content of N of the light reflection reducing layer is 1.3 at % or more and 4.6 at % or less.
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