US 11,926,558 B2
Conductive structure, manufacturing method therefor, and electrode comprising conductive structure
Ilha Lee, Daejeon (KR); Seung Heon Lee, Daejeon (KR); Song Ho Jang, Daejeon (KR); Dong Hyun Oh, Daejeon (KR); Ji Young Hwang, Daejeon (KR); Ki-Hwan Kim, Daejeon (KR); Han Min Seo, Daejeon (KR); Chan Hyoung Park, Daejeon (KR); and Sun Young Park, Daejeon (KR)
Assigned to LG CHEM LTD., Seoul (KR)
Appl. No. 15/559,742
Filed by LG CHEM, LTD., Seoul (KR)
PCT Filed Mar. 28, 2016, PCT No. PCT/KR2016/003109
§ 371(c)(1), (2) Date Sep. 19, 2017,
PCT Pub. No. WO2016/159602, PCT Pub. Date Oct. 6, 2016.
Claims priority of application No. 10-2015-0043565 (KR), filed on Mar. 27, 2015; and application No. 10-2016-0019151 (KR), filed on Feb. 18, 2016.
Prior Publication US 2018/0046017 A1, Feb. 15, 2018
Int. Cl. G02F 1/1335 (2006.01); B32B 3/26 (2006.01); B32B 9/04 (2006.01); B32B 15/04 (2006.01); C03C 17/36 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/18 (2006.01); G02F 1/1343 (2006.01); H10K 50/86 (2023.01); G02F 1/1333 (2006.01); G06F 3/041 (2006.01); G06F 3/044 (2006.01); H10K 50/805 (2023.01)
CPC C03C 17/36 (2013.01) [B32B 3/266 (2013.01); B32B 9/04 (2013.01); B32B 15/04 (2013.01); C03C 17/3605 (2013.01); C03C 17/3626 (2013.01); C03C 17/3649 (2013.01); C03C 17/3671 (2013.01); C23C 14/0036 (2013.01); C23C 14/0676 (2013.01); C23C 14/185 (2013.01); G02F 1/133502 (2013.01); G02F 1/13439 (2013.01); H10K 50/86 (2023.02); B32B 2307/202 (2013.01); B32B 2307/416 (2013.01); B32B 2309/105 (2013.01); G02F 1/13338 (2013.01); G02F 1/134363 (2013.01); G06F 3/041 (2013.01); G06F 3/044 (2013.01); G06F 2203/04103 (2013.01); H10K 50/805 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A conductive structure body, comprising:
a substrate;
a metal layer provided on the substrate; and
a light reflection reducing layer provided on at least one surface of the metal layer,
wherein the light reflection reducing layer consists of MoTiaOxNy (0<a≤2, 0<x≤3, 0<y≤2, x+y>0, and a, x and y mean ratios of the number of atoms of Ti, O and N, respectively), and
wherein the light reflection reducing layer has an element content of O and N that satisfy 0<Nat %/Oat %≤0.02,
wherein the element content of O of the light reflection reducing layer is 42,5 at % or more and less than 53.9 at %,
wherein the element content of Mo of the light reflection reducing layer is 28.6 at % or more and 33.2 at %,
wherein the element content of Ti of the light reflection reducing layer is 12.7 at % or more and 14.5 at % or less, and
wherein the element content of N of the light reflection reducing layer is 1.3 at % or more and 4.6 at % or less.