US 12,250,890 B2
Two-terminal atom-based switching device and manufacturing method thereof
Banerjee Wrtiam, Pohang-si (KR); Hyun Sang Hwang, Daegu (KR); and Seung Woo Lee, Siheung-si (KR)
Assigned to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION, Pohang-si (KR)
Filed by POSTECH Research and Business Development Foundation, Pohang-si (KR)
Filed on Jun. 6, 2022, as Appl. No. 17/833,691.
Claims priority of application No. 10-2021-0112305 (KR), filed on Aug. 25, 2021.
Prior Publication US 2023/0061770 A1, Mar. 2, 2023
Int. Cl. H10N 70/20 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/24 (2023.02) [H10N 70/011 (2023.02); H10N 70/841 (2023.02)] 4 Claims
OG exemplary drawing
 
1. A method of manufacturing a two-terminal atom-based switching device, the method comprising:
an operation of providing a two-terminal atom-based switching device including a lower electrode, an insulating layer formed on the lower electrode, and an upper electrode formed on the insulating layer;
a first forming operation of forming an oxygen vacancy percolation path in the insulating layer by applying a negative voltage to the upper electrode;
a second forming operation of forming a filament by metal ions in the oxygen vacancy percolation path by applying a positive voltage to the upper electrode, and removing the applied positive voltage to make a spontaneous rupture of the formed filament; and
a negative voltage application switching operation of removing some of the metal ions formed in the oxygen vacancy percolation path by applying a negative voltage to the upper electrode.