US 12,250,889 B2
Phase change memory cell with double active volume
Timothy Mathew Philip, Albany, NY (US); Jin Ping Han, Yorktown Heights, NY (US); Kevin W. Brew, Niskayuna, NY (US); Ching-Tzu Chen, Ossining, NY (US); and Injo Ok, Loudonville, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Mar. 2, 2022, as Appl. No. 17/653,143.
Prior Publication US 2023/0284541 A1, Sep. 7, 2023
Int. Cl. H10N 70/20 (2023.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [G11C 13/004 (2013.01); H10N 70/021 (2023.02); H10N 70/826 (2023.02); H10N 70/8616 (2023.02); G11C 13/0004 (2013.01); G11C 2013/0045 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A structure comprising:
a first phase change material layer vertically aligned above a bottom electrode;
a dielectric layer vertically aligned above the first phase change material layer;
a second phase change material layer vertically aligned above the dielectric layer;
an inner electrode physically and electrically connected to the first phase change material layer and the second phase change material layer, the inner electrode surrounded by the dielectric layer, wherein the inner electrode is the same material as the bottom electrode; and
a top electrode vertically aligned above the second phase change material layer.