| CPC H10K 59/38 (2023.02) [H10K 59/1201 (2023.02)] | 13 Claims |

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1. A method for manufacturing a patterned quantum dot film layer, comprising:
forming a plurality of grooves in one side of an original substrate;
forming an isolation layer on the side, with the plurality of grooves, of the original substrate, wherein a thickness of the isolation layer is smaller than a depth of the grooves, and pattern pits are formed in a region, corresponding to the grooves, of the isolation layer;
forming quantum dot pattern portions in the pattern pits through a quantum dot solution self-assembly process;
forming a sacrificial layer on sides, facing away from the isolation layer, of the quantum dot pattern portions;
attaching an adhesive layer to a side, facing away from the quantum dot pattern portions, of the sacrificial layer;
peeling off the adhesive layer to separate the quantum dot pattern portions and the sacrificial layer from the isolation layer together with the adhesive layer, to obtain a laminated structure of the adhesive layer, the sacrificial layer and the quantum dot pattern portions; and
enabling a surface, exposing the quantum dot pattern portions, of the laminated structure to be in contact with a target substrate, and removing the sacrificial layer and the adhesive layer.
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