US 12,250,853 B2
Display device with connected shielding layer and gate electrode layer and manufacturing method thereof
Weibin Zhang, Wuhan (CN); and Hong Liu, Wuhan (CN)
Assigned to WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Hubei (CN)
Appl. No. 17/614,519
Filed by WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Wuhan (CN)
PCT Filed Nov. 4, 2021, PCT No. PCT/CN2021/128538
§ 371(c)(1), (2) Date Nov. 27, 2021,
PCT Pub. No. WO2023/070712, PCT Pub. Date May 4, 2023.
Claims priority of application No. 202111243099.4 (CN), filed on Oct. 25, 2021.
Prior Publication US 2023/0131235 A1, Apr. 27, 2023
Int. Cl. H10K 59/126 (2023.01); H01L 29/786 (2006.01); H10K 59/12 (2023.01); H10K 59/122 (2023.01)
CPC H10K 59/126 (2023.02) [H01L 29/78672 (2013.01); H01L 29/78696 (2013.01); H10K 59/122 (2023.02); H10K 59/1201 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A display device, comprising:
a substrate;
a shielding layer disposed on a side of the substrate;
a semiconductor layer disposed on a side of the shielding layer away from the substrate,
wherein the shielding layer is at least partially overlapped with the semiconductor layer; and
a first gate electrode layer disposed on a side of the semiconductor layer away from the substrate,
the first gate electrode layer is at least partially overlapped with the semiconductor layer and is electrically connected to the shielding layer;
wherein the display device comprises driving circuits, each of the driving circuits comprises a plurality of thin film transistors, each of the thin film transistors comprise a semiconductor section disposed corresponding to the semiconductor layer, the semiconductor section of at least part of the thin film transistors is overlapped with the shielding layer.