US 12,250,850 B2
Organic light emitting display device comprising multi type thin film transistor
Sangsoon Noh, Goyang-si (KR); and Eunsung Kim, Goyang-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Dec. 4, 2023, as Appl. No. 18/528,571.
Application 18/528,571 is a continuation of application No. 17/515,247, filed on Oct. 29, 2021, granted, now 11,871,616.
Claims priority of application No. 10-2020-0173032 (KR), filed on Dec. 11, 2020.
Prior Publication US 2024/0107809 A1, Mar. 28, 2024
Int. Cl. H01L 27/14 (2006.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01); H10K 59/126 (2023.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01)
CPC H10K 59/1213 (2023.02) [H10K 59/1216 (2023.02); H10K 59/124 (2023.02); H10K 59/126 (2023.02); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 29/78633 (2013.01); H01L 29/78675 (2013.01); H01L 29/7869 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An organic light emitting display device, comprising:
a substrate including a first substrate, a second substrate, and an inorganic insulating layer disposed between the first substrate and the second substrate;
a first buffer layer on the substrate;
a first thin film transistor including a first active layer that is formed of a low-temperature polysilicon and includes a first source region, a first channel region, and a first drain region, a first gate electrode that overlaps the first active layer with a first gate insulating layer interposed therebetween, and a first source electrode and a first drain electrode that are electrically connected to the first active layer;
a second thin film transistor including a second active layer that is formed of an oxide semiconductor and includes a second source region, a second channel region, and a second drain region, a second gate electrode that overlaps the second active layer with a second gate insulating layer interposed therebetween, and a second source electrode and a second drain electrode that are electrically connected to the second active layer;
a storage capacitor including a first capacitor electrode that is disposed on a same layer as the first gate electrode, and a second capacitor electrode that overlaps the first capacitor electrode with a first interlayer insulating layer interposed therebetween; and
a light blocking layer disposed under the second active layer and overlapping a lower portion of the second active layer and formed on a same layer as the second capacitor electrode,
wherein at least one pattern is disposed under the light blocking layer, and the at least one pattern disposed on the same layer as the first gate electrode and formed of the same material as the first gate electrode.