US 12,250,848 B2
Display apparatus including substrate hole
So Young Noh, Goyang-si (KR); and Kyeong Ju Moon, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Jun. 30, 2021, as Appl. No. 17/364,626.
Claims priority of application No. 10-2020-0142879 (KR), filed on Oct. 30, 2020.
Prior Publication US 2022/0140013 A1, May 5, 2022
Int. Cl. H10K 59/121 (2023.01); H10K 50/844 (2023.01); H10K 59/00 (2023.01); H10K 59/124 (2023.01)
CPC H10K 59/121 (2023.02) [H10K 50/844 (2023.02); H10K 59/00 (2023.02); H10K 59/124 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A display apparatus comprising:
a buffer insulation layer on a substrate;
a substrate hole passing through the substrate and the buffer insulation layer;
at least one thin film transistor disposed on the substrate;
a light emitting device disposed on the substrate, spaced apart from the substrate hole, the light emitting device including a first electrode, a light emitting layer, and a second electrode;
first and second planarization layers disposed between the at least one thin film transistor and the light emitting device;
a plurality of isolation structures on the buffer insulation layer, the plurality of isolation structures disposed between the substrate hole and the light emitting device from a plan view; and
a connection electrode disposed between the first and second planarization layers and electrically connecting a drain electrode of the at least one thin film transistor to the first electrode,
wherein each isolation structure of the plurality of isolation structures includes a first structure and a second structure, the second structure disposed on a top surface of the first structure,
wherein the second structure has a width wider than a width of the first structure to define at least one undercut structure,
wherein a height of the at least one undercut structure is greater than a thickness of the light emitting layer,
wherein the second structure does not extend below the top surface of the first structure,
wherein the second structure is a same material as the connection electrode,
wherein a first portion of the light emitting layer is disposed on the second structure,
wherein the first portion of the light emitting layer disposed on the second structure does not extend below the top surface of the first structure,
wherein a second portion of the light emitting layer is different from the first portion of the light emitting layer, and
wherein the second portion of the light emitting layer is disposed between adjacent isolation structures of the plurality of isolation structures from a plan view.